Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms

Resonance Fluorescence from Semiconductor Quantum Dots: Beyond the Mollow

Resonance fluorescence from semiconductor quantum dots: beyond the Mollow triplet.

We show that the resonance fluorescence spectrum of a quantum dot excited by a strong optical pulse contains multiple peaks beyond those of the Mollow triplet. We show that as the area of the optical pulse is increased, new side peaks split off the central peak and shift in frequency. A simple analytical theory has been derived, which quantitatively accounts for the appearance and position of t...

Dephasing in Open Quantum Dots

Shape-averaged magnetoconductance (weak localization) is used for the first time to obtain the electron phase coherence time tf in open ballistic GaAs quantum dots. Values for tf in the range of temperature T from 0.34 to 4 K are found to be independent of dot area, and are not consistent with the tf ~ T22 behavior expected for isolated dots. Surprisingly, tfsT d agrees quantitatively with the ...

Dephasing in InAs/GaAs quantum dots

Ultralong dephasing time in InGaAs quantum dots.

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-aco...